Memory device with different termination units for different signal frequencies
A memory device includes a first termination unit coupled to a first pin for receiving a first signal having a first frequency component. The memory device also includes a second termination unit coupled to a second pin for receiving a second signal having a second frequency component higher than th...
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Main Author | |
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Format | Patent |
Language | English |
Published |
07.08.2007
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Subjects | |
Online Access | Get full text |
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Summary: | A memory device includes a first termination unit coupled to a first pin for receiving a first signal having a first frequency component. The memory device also includes a second termination unit coupled to a second pin for receiving a second signal having a second frequency component higher than the first frequency component. The first termination unit is a different type from the second termination unit that provides less signal distortion than the first termination unit. For example, the first termination unit is of an open-drain type that has less power consumption, and the second termination unit is of a push-pull type that has less signal distortion. |
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Bibliography: | Application Number: US20040975808 |