Nonvolatile memory device and method of manufacturing the same
Provided are a nonvolatile memory device and a method of manufacturing the same. The device includes a semiconductor substrate; a source region and a drain region disposed in the semiconductor substrate and a channel region interposed between the source and drain regions; a first tunnel oxide layer...
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Main Authors | , , , , , |
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Format | Patent |
Language | English |
Published |
24.04.2007
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Subjects | |
Online Access | Get full text |
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