Method of manufacturing thin quartz crystal wafer

• Main Authors: KUROSAWA TAMOTSU, ONO KOZO, CHIBA AKIO
• Format: Patent
• Language: English
• Published: 13.02.2007
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRONIC CIRCUITRY; CHEMISTRY; CLADDING OR PLATING BY SOLDERING OR WELDING; CRYSTAL GROWTH; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; DEAF-AID SETS; ELECTRIC COMMUNICATION TECHNIQUE; ELECTRICITY; IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKEACOUSTIC ELECTROMECHANICAL TRANSDUCERS; MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR; METALLURGY; PERFORMING OPERATIONS; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; PUBLIC ADDRESS SYSTEMS; REFINING BY ZONE-MELTING OF MATERIAL; RESONATORS; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SOLDERING OR UNSOLDERING; TRANSPORTING; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; WELDING; WORKING BY LASER BEAM; WORKING CEMENT, CLAY, OR STONE; WORKING STONE OR STONE-LIKE MATERIALS

A method of manufacturing a thin quartz crystal wafer from a quartz crystal block which is cut from a crystal body of synthetic quartz crystal and has a flat principal surface, comprises the steps of (a) converging a laser beam at a region in said quartz crystal block at a predetermined depth from t...