Method of manufacturing thin quartz crystal wafer
A method of manufacturing a thin quartz crystal wafer from a quartz crystal block which is cut from a crystal body of synthetic quartz crystal and has a flat principal surface, comprises the steps of (a) converging a laser beam at a region in said quartz crystal block at a predetermined depth from t...
Saved in:
Main Authors | , , |
---|---|
Format | Patent |
Language | English |
Published |
13.02.2007
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | A method of manufacturing a thin quartz crystal wafer from a quartz crystal block which is cut from a crystal body of synthetic quartz crystal and has a flat principal surface, comprises the steps of (a) converging a laser beam at a region in said quartz crystal block at a predetermined depth from the principal surface thereof to cause multiphoton phenomenon state, thereby breaking Si-O-Si bonds of quartz crystal in said region to form voids in said region, and (b) peeling said thin quartz crystal wafer from a body of said quartz crystal block along said voids. The above process is repeatedly performed on one quartz crystal block to peel off a plurality of thin quartz crystal wafers successively from the principal surface of the quartz crystal block. Each of the thin quartz crystal wafers is divided into individual quartz crystal blanks for making quartz crystal units. |
---|---|
AbstractList | A method of manufacturing a thin quartz crystal wafer from a quartz crystal block which is cut from a crystal body of synthetic quartz crystal and has a flat principal surface, comprises the steps of (a) converging a laser beam at a region in said quartz crystal block at a predetermined depth from the principal surface thereof to cause multiphoton phenomenon state, thereby breaking Si-O-Si bonds of quartz crystal in said region to form voids in said region, and (b) peeling said thin quartz crystal wafer from a body of said quartz crystal block along said voids. The above process is repeatedly performed on one quartz crystal block to peel off a plurality of thin quartz crystal wafers successively from the principal surface of the quartz crystal block. Each of the thin quartz crystal wafers is divided into individual quartz crystal blanks for making quartz crystal units. |
Author | CHIBA AKIO KUROSAWA TAMOTSU ONO KOZO |
Author_xml | – fullname: KUROSAWA TAMOTSU – fullname: ONO KOZO – fullname: CHIBA AKIO |
BookMark | eNrjYmDJy89L5WQw9E0tychPUchPU8hNzCtNS0wuKS3KzEtXKMnIzFMoLE0sKqlSSC6qLC5JzFEoT0xLLeJhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGhweaG5iZmRgZORsZEKAEAVvgteQ |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
ExternalDocumentID | US7174620B2 |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_US7174620B23 |
IEDL.DBID | EVB |
IngestDate | Fri Jul 19 15:32:25 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_US7174620B23 |
Notes | Application Number: US20030746400 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070213&DB=EPODOC&CC=US&NR=7174620B2 |
ParticipantIDs | epo_espacenet_US7174620B2 |
PublicationCentury | 2000 |
PublicationDate | 20070213 |
PublicationDateYYYYMMDD | 2007-02-13 |
PublicationDate_xml | – month: 02 year: 2007 text: 20070213 day: 13 |
PublicationDecade | 2000 |
PublicationYear | 2007 |
RelatedCompanies | NIHON DEMPA KOGYO CO., LTD |
RelatedCompanies_xml | – name: NIHON DEMPA KOGYO CO., LTD |
Score | 2.670674 |
Snippet | A method of manufacturing a thin quartz crystal wafer from a quartz crystal block which is cut from a crystal body of synthetic quartz crystal and has a flat... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRONIC CIRCUITRY CHEMISTRY CLADDING OR PLATING BY SOLDERING OR WELDING CRYSTAL GROWTH CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING DEAF-AID SETS ELECTRIC COMMUNICATION TECHNIQUE ELECTRICITY IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKEACOUSTIC ELECTROMECHANICAL TRANSDUCERS MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR METALLURGY PERFORMING OPERATIONS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE PUBLIC ADDRESS SYSTEMS REFINING BY ZONE-MELTING OF MATERIAL RESONATORS SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SOLDERING OR UNSOLDERING TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL WELDING WORKING BY LASER BEAM WORKING CEMENT, CLAY, OR STONE WORKING STONE OR STONE-LIKE MATERIALS |
Title | Method of manufacturing thin quartz crystal wafer |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070213&DB=EPODOC&locale=&CC=US&NR=7174620B2 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LS8NAEB5KFfWmVbG-2IPkFkyySZMegpAXRegD20pvZZNsMKBpTVOK_npn16Z60duyC7MPdma-2Z0HwF3iWDwxLR0vb5yoAlKrTmpylXGbMabTtMukl--g05uajzNr1oC8joWReUI3MjkiclSC_F5Jeb38ecQKpG_l6j7OsWvxEE3cQKmtYxtVFlUCzw1Hw2DoK77vTsfK4MlFq8XsGJqH0npPoGiRZj989kRQyvK3RomOYX-ExIrqBBq8aMGhXxdea8FBf_vfjc0t661OQe_LWs9kkZE3VqxFQIKMMCTVS16Qd-Gb-UmS8gPR3ivZsIyXZ0CicOL3VJx7vtvnfDrerZKeQxPNf34BpGswjesIzDRGzZRaTLczx6ZGgj0CPLWh_SeZy3_GruDo-53SUHV6Dc2qXPMbVLBVfCuP5gvN1n-d |
link.rule.ids | 230,309,786,891,25594,76903 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dT8IwEL8QNOKbokb87IPZ2-K6bmw8LCZsEFQYRJjhbelGiSQ6cIwQ_eu9VYa-6FvTJteP9Hr3a-_XA7iJbVPEhklx80axmrvUqj0xhMqFxTmnbNLgMsrXr3cC42FsjkswK7gw8p_QtfwcETUqRn3P5Hm9-LnE8mRs5fI2mmHV_K49cjylQMcWmiymeE2nNeh7fVdxXScYKv6Tg6jFqOtaE0_rHQsRoURKz82clLL4bVHaB7A7QGFJdgglkVSh4haJ16qw19u8d2Nxo3rLI6A9meuZzKfkjSernJAgGYYke5kl5D2PzfwkcfqB3t4rWfOpSI-BtFsjt6Ni3-F2nmEw3I6SnUAZ4b84BdLQuSYoOmYaZ8aEmZxaU9tieow1ufNUg9qfYs7-abuGSmfU64bde__xHPa_7yx1lbILKGfpSlyisc2iK7lMX-p0goc |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Method+of+manufacturing+thin+quartz+crystal+wafer&rft.inventor=KUROSAWA+TAMOTSU&rft.inventor=ONO+KOZO&rft.inventor=CHIBA+AKIO&rft.date=2007-02-13&rft.externalDBID=B2&rft.externalDocID=US7174620B2 |