Inclusion of low-k dielectric material between bit lines

• Main Authors: NESBIT LARRY, FENG GEORGE C, LOW KIA SENG
• Format: Patent
• Language: English
• Published: 24.10.2006
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Low-k dielectric materials are incorporated as an insulator material between bit lines and an inter-level dielectric material. The device is first processed in a known manner, up to and including the deposition and anneal of the bit line metal, using a higher dielectric constant material that can wi...