Manufacture method for semiconductor device with patterned film of ZrO2 or the like

An insulating film made of zirconia or hafnia is formed on the surface of a semiconductor substrate. A partial surface area of the insulating film is covered with a mask pattern. By using the mask pattern as a mask, ions are implanted into a region of the insulating film not covered with the mask pa...

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Bibliographic Details
Main Authors IRINO KIYOSHI, XIAO SHIQIN, MORISAKI YUSUKE, OHBA TAKAYUKI, SUGITA YOSHIHIRO
Format Patent
LanguageEnglish
Published 14.02.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An insulating film made of zirconia or hafnia is formed on the surface of a semiconductor substrate. A partial surface area of the insulating film is covered with a mask pattern. By using the mask pattern as a mask, ions are implanted into a region of the insulating film not covered with the mask pattern to give damages to the insulating film. By using the mask pattern as a mask, a portion of the insulating film is etched.
Bibliography:Application Number: US20030633534