CVD of tantalum and tantalum nitride films from tantalum halide precursors
A chemical vapor deposition (CVD) method for depositing high quality conformal tantalum (Ta) and tantalum nitride (TaNx) films from inorganic tantalum pentahalide (TaX5) precursors is described. The inorganic tantalum halide precursors are tantalum pentafluoride (TaF5), tantalum pentachloride (TaCl5...
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Format | Patent |
Language | English |
Published |
31.05.2005
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Abstract | A chemical vapor deposition (CVD) method for depositing high quality conformal tantalum (Ta) and tantalum nitride (TaNx) films from inorganic tantalum pentahalide (TaX5) precursors is described. The inorganic tantalum halide precursors are tantalum pentafluoride (TaF5), tantalum pentachloride (TaCl5) and tantalum pentabromide (TaBr5). A TaX5 vapor is delivered into a heated chamber. The vapor is combined with a process gas to deposit a Ta or TaNx film on a substrate that is heated to 300° C.-500° C. The deposited film is useful for integrated circuits containing copper films, especially in small high aspect ratio features. The high conformality of these films is superior to films deposited by PVD. |
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AbstractList | A chemical vapor deposition (CVD) method for depositing high quality conformal tantalum (Ta) and tantalum nitride (TaNx) films from inorganic tantalum pentahalide (TaX5) precursors is described. The inorganic tantalum halide precursors are tantalum pentafluoride (TaF5), tantalum pentachloride (TaCl5) and tantalum pentabromide (TaBr5). A TaX5 vapor is delivered into a heated chamber. The vapor is combined with a process gas to deposit a Ta or TaNx film on a substrate that is heated to 300° C.-500° C. The deposited film is useful for integrated circuits containing copper films, especially in small high aspect ratio features. The high conformality of these films is superior to films deposited by PVD. |
Author | WESTENDORP JOHANNES F. M HAUTALA JOHN J |
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RelatedCompanies | TOKYO ELECTRON LIMITED |
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Snippet | A chemical vapor deposition (CVD) method for depositing high quality conformal tantalum (Ta) and tantalum nitride (TaNx) films from inorganic tantalum... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
Title | CVD of tantalum and tantalum nitride films from tantalum halide precursors |
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