Semiconductor memory device and method of manufacturing same

• Main Authors: BAE KI-SOON, LEE HOONI
• Format: Patent
• Language: English
• Published: 30.11.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor memory device and a method of manufacturing same, wherein landing pads are formed to contact source/drain regions of an access transistor in a memory cell array area and a first resistor device is formed in the peripheral circuit area, by depositing a first conductive layer on a semiconductor substrate having an access transistor formed thereon and patterning the first conductive layer. An interlayer insulation layer is deposited on the resultant structure, and a lower electrode and a dielectric layer having a high dielectric constant of a capacitor are formed to contact the source/drain region of the access transistor. By depositing a second conductive layer on the resultant structure having the dielectric layer and patterning the dielectric layer, a capacitor upper electrode is formed in the memory cell array area and a second resistor device is formed in the peripheral circuit area.