Linewidth measurement structure with embedded scatterometry structure

A method of manufacturing a semiconductor device includes depositing a layer over a substrate and etching the layer to form a grating structure, a cross bridge test structure and a line width measurement structure. The grating structure includes a plurality of parallel lines and one of the multiple...

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Bibliographic Details
Main Authors NARIMAN HORMUZDIAR E, WRISTERS DERICK J
Format Patent
LanguageEnglish
Published 23.11.2004
Edition7
Subjects
APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBEMICROSCOPY [SPM]
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASURING
PHYSICS
SCANNING-PROBE TECHNIQUES OR APPARATUS
SEMICONDUCTOR DEVICES
TESTING
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Summary:A method of manufacturing a semiconductor device includes depositing a layer over a substrate and etching the layer to form a grating structure, a cross bridge test structure and a line width measurement structure. The grating structure includes a plurality of parallel lines and one of the multiple parallel lines is connected to the line width measurement structure and the cross bridge test structure. A scatterometry test is performed on the grating structure to obtain a line width and this width is compared to a line width calculated using the line width measurement structure. A semiconductor device is also disclosed.
Bibliography:Application Number: US20020298664