Ion beam apparatus and sample processing method

• Main Authors: MUTO HIROYUKI, ISHITANI TOHRU, MADOKORO YUICHI
• Format: Patent
• Language: English
• Published: 23.11.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GAMMA RAY OR X-RAY MICROSCOPES; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; IRRADIATION DEVICES; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; NUCLEAR ENGINEERING; NUCLEAR PHYSICS; PHYSICS; SEMICONDUCTOR DEVICES; TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR

For the sake of realizing high throughput and high processing position accuracy in an ion beam apparatus, two kinds of ion beams for processing are prepared of which one is a focusing ion beam for high image resolution and an edge processing ion beam of large beam current for permitting a sectional edge portion to be processed sharply, whereby high processing position accuracy can be ensured even with a large current ion beam.