Chemical vapor deposition of silicate high dielectric constant materials
A method of fabricating an electronic device over a semiconductor substrate, the method comprising the steps of: forming a conductive structure over the semiconductor substrate (step 106 of FIG. 1); and forming a layer of high-dielectric constant material between the conductive structure and the sem...
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Main Author | |
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Format | Patent |
Language | English |
Published |
23.11.2004
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | A method of fabricating an electronic device over a semiconductor substrate, the method comprising the steps of: forming a conductive structure over the semiconductor substrate (step 106 of FIG. 1); and forming a layer of high-dielectric constant material between the conductive structure and the semiconductor substrate (step 102 of FIG. 1), the layer of high-dielectric constant material is formed by supplying a gaseous silicon source and a second gaseous material which is comprised of a material selected from the group consisting of: Hf, Zr, La, Y, Sc, Ce and any combination thereof. |
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Bibliography: | Application Number: US20030409007 |