Fabrication method for forming flash memory device provided with adjustable sharp end structure of the L-shaped floating gate

• Main Authors: JENG ERIK S, HUNG CHIH-HSUEH, WEN WEN-YING, HORNG JYH-LONG, KUO BAI-JUN
• Format: Patent
• Language: English
• Published: 27.07.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention generally relates to provide a fabrication method for forming a flash memory device provided with an adjustable sharp end structure of the floating gate. While the present invention utilizes the dielectric spacer to form the L-shaped floating gate provided with a sharp end structure, the present invention adjust the thickness of the polysilicon layer and the dielectric layer covering on the polysilicon layer surface to adjust the position of the dielectric spacer so as to change the position of the sharp end structure of the L-shaped floating gate and to enhance the ability of erasing control of the flash memory and to simultaneously form a stable and easily controlled channel length and the sharp end structure for point discharging.