Method of producing a capacitor electrode with a barrier structure
A capacitor electrode is produced with an underlying barrier structure. A barrier incorporation layer is used and a CMP (chemical mechanical polishing) process is employed in order to produce the barrier structure. The capacitor electrode with an underlying barrier structure is produced by depositin...
Saved in:
Main Authors | , , |
---|---|
Format | Patent |
Language | English |
Published |
03.02.2004
|
Edition | 7 |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | A capacitor electrode is produced with an underlying barrier structure. A barrier incorporation layer is used and a CMP (chemical mechanical polishing) process is employed in order to produce the barrier structure. The capacitor electrode with an underlying barrier structure is produced by depositing a barrier layer on a semiconductor substrate; forming a barrier structure from the barrier layer with a lithographic mask and an etching step; depositing a barrier incorporation layer covering the barrier structure and surrounding regions; and removing the barrier incorporation layer with chemical mechanical polishing until the barrier structure is uncovered, to thereby form the capacitor electrode above the barrier structure. |
---|---|
AbstractList | A capacitor electrode is produced with an underlying barrier structure. A barrier incorporation layer is used and a CMP (chemical mechanical polishing) process is employed in order to produce the barrier structure. The capacitor electrode with an underlying barrier structure is produced by depositing a barrier layer on a semiconductor substrate; forming a barrier structure from the barrier layer with a lithographic mask and an etching step; depositing a barrier incorporation layer covering the barrier structure and surrounding regions; and removing the barrier incorporation layer with chemical mechanical polishing until the barrier structure is uncovered, to thereby form the capacitor electrode above the barrier structure. |
Author | BEITEL GERHARD SAENGER ANNETTE KASKO IGOR |
Author_xml | – fullname: KASKO IGOR – fullname: SAENGER ANNETTE – fullname: BEITEL GERHARD |
BookMark | eNqNjDsOwjAQBV1Awe8OewGaICzqIBANFVBHxnlJLEVea70W18cFB6CaYkazNovIESvT3qET98QDJeG--BBHcuRdcj4oC2GG12pAn6BTVW8nEiCUVYrXItia5eDmjN2PG0PXy_N82yNxh1xHiNDu9bD2ZBt7bJvDH8kX7hAzqw |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
Edition | 7 |
ExternalDocumentID | US6686265B2 |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_US6686265B23 |
IEDL.DBID | EVB |
IngestDate | Fri Aug 09 05:01:16 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_US6686265B23 |
Notes | Application Number: US20020127618 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20040203&DB=EPODOC&CC=US&NR=6686265B2 |
ParticipantIDs | epo_espacenet_US6686265B2 |
PublicationCentury | 2000 |
PublicationDate | 20040203 |
PublicationDateYYYYMMDD | 2004-02-03 |
PublicationDate_xml | – month: 02 year: 2004 text: 20040203 day: 03 |
PublicationDecade | 2000 |
PublicationYear | 2004 |
RelatedCompanies | INFINEON TECHNOLOGIES AG |
RelatedCompanies_xml | – name: INFINEON TECHNOLOGIES AG |
Score | 2.59311 |
Snippet | A capacitor electrode is produced with an underlying barrier structure. A barrier incorporation layer is used and a CMP (chemical mechanical polishing) process... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | Method of producing a capacitor electrode with a barrier structure |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20040203&DB=EPODOC&locale=&CC=US&NR=6686265B2 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_GFPVNp-L8Ig_St2K3tJ19KEK_GEK34VbZ20ibFPbSlq7iv-8la6cv-hZyEC6Bu8vvkvsdwJPIRtx5YVznWT7RTZtz3aEW03MnZ3bGuclHssA5ntnTxHxbW-sebLtaGMUT-qXIEdGiMrT3Rvnr6ieJFai_lbvndItT5Wu0cgOtQ8cSDVEt8NxwMQ_mvub7brLUZu-uLSshbMtDb30kb9GSZj_88GRRSvU7okTncLzAxYrmAnqiGMCp3zVeG8BJ3L5347A1vd0leLHq9UzKnFSKpRVjDmEkw2CXoVXWpG1owwWRuVUUpayW7ejIniL2sxZXQKJw5U91VGZz2PgmWR7UptfQL8pC3ABBwGQww2YIhRiCOTOlnMprBBsz6lAuhjD8c5nbf2R3cLb_ljLWDXoPfVROPGDEbdJHdVbfaPSHPA |
link.rule.ids | 230,309,786,891,25594,76906 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LT8MwDLamgRg3GCDGMwfUW0W3dB09VEhtVxVYt4m1aLcpTVJpl27qhvj7ONkDLnCLYilyItnO58SfAR4kbwv3iQlT8KJn2o4Qpku7zCzcgjlcCFu0VYFzMnTizH6ddqc1mO9qYTRP6JcmR0SL4mjva-2vlz9JrFD_rVw95nOcWjxHqRcaO3Ss0BA1Qt_rj0fhKDCCwMsmxvDdc1QlhNP10Vsf9BQ5r7o5ffiqKGX5O6JEJ3A4xsXK9SnUZNmERrBrvNaEo2T73o3DremtzsBPdK9nsijIUrO0YswhjHAMdhytsiLbhjZCEpVbRVHOKtWOjmwoYj8reQ4k6qdBbKIys_3GZ9lkrza9gHq5KOUlEARMFrMchlCIIZizcyqoukawDqMuFbIFrT-XufpHdg-NOE0Gs8HL8O0ajjdfVDqmRW-gjorKW4y-6_xOn9s35POKKQ |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Method+of+producing+a+capacitor+electrode+with+a+barrier+structure&rft.inventor=KASKO+IGOR&rft.inventor=SAENGER+ANNETTE&rft.inventor=BEITEL+GERHARD&rft.date=2004-02-03&rft.externalDBID=B2&rft.externalDocID=US6686265B2 |