Method of producing a capacitor electrode with a barrier structure

• Main Authors: KASKO IGOR, SAENGER ANNETTE, BEITEL GERHARD
• Format: Patent
• Language: English
• Published: 03.02.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A capacitor electrode is produced with an underlying barrier structure. A barrier incorporation layer is used and a CMP (chemical mechanical polishing) process is employed in order to produce the barrier structure. The capacitor electrode with an underlying barrier structure is produced by depositing a barrier layer on a semiconductor substrate; forming a barrier structure from the barrier layer with a lithographic mask and an etching step; depositing a barrier incorporation layer covering the barrier structure and surrounding regions; and removing the barrier incorporation layer with chemical mechanical polishing until the barrier structure is uncovered, to thereby form the capacitor electrode above the barrier structure.