Method and apparatus for ionized plasma deposition
A system for performing PVD of metallic nitride(s) is disclosed. The improved performance is provided by a method of increasing the partial pressures of nitrogen or other active gases near the wafer surface through initial introduction of the argon or other neutral gases alone into an ionized metal...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
30.09.2003
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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