Lateral injection vertical cavity surface-emitting laser

A lateral injection VCSEL comprises upper and lower mirrors forming a cavity resonator, an active region disposed in the resonator, high conductivity upper and lower contact layers located on opposite sides of the active region, upper and lower electrodes disposed on the upper and lower contact laye...

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Main Authors CHIROVSKY LEO MARIA, D'ASARO LUCIAN ARTHUR, HOBSON WILLIAM SCOTT, LOPATA JOHN
Format Patent
LanguageEnglish
Published 10.12.2002
Edition7
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Abstract A lateral injection VCSEL comprises upper and lower mirrors forming a cavity resonator, an active region disposed in the resonator, high conductivity upper and lower contact layers located on opposite sides of the active region, upper and lower electrodes disposed on the upper and lower contact layers, respectively, and on laterally opposite sides of the upper mirror, and a current guide structure including an apertured high resistivity layer for constraining current to flow in a relatively narrow channel through the active region, characterized in that a portion of the lower contact layer that extends under the top electrode has relatively high resistivity. This feature of our invention serves two purposes. First, it suppresses current flow in parallel paths and, therefore, tends to make the current density distribution in the aperture more favorable for the fundamental mode. Second, it reduces parasitic capacitance.
AbstractList A lateral injection VCSEL comprises upper and lower mirrors forming a cavity resonator, an active region disposed in the resonator, high conductivity upper and lower contact layers located on opposite sides of the active region, upper and lower electrodes disposed on the upper and lower contact layers, respectively, and on laterally opposite sides of the upper mirror, and a current guide structure including an apertured high resistivity layer for constraining current to flow in a relatively narrow channel through the active region, characterized in that a portion of the lower contact layer that extends under the top electrode has relatively high resistivity. This feature of our invention serves two purposes. First, it suppresses current flow in parallel paths and, therefore, tends to make the current density distribution in the aperture more favorable for the fundamental mode. Second, it reduces parasitic capacitance.
Author LOPATA JOHN
CHIROVSKY LEO MARIA
HOBSON WILLIAM SCOTT
D'ASARO LUCIAN ARTHUR
Author_xml – fullname: CHIROVSKY LEO MARIA
– fullname: D'ASARO LUCIAN ARTHUR
– fullname: HOBSON WILLIAM SCOTT
– fullname: LOPATA JOHN
BookMark eNrjYmDJy89L5WSw8EksSS1KzFHIzMtKTS7JzM9TKEstKslMBgolJ5ZlllQqFJcWpSUmp-qm5maWlGTmpSvkJBanFvEwsKYl5hSn8kJpbgYFN9cQZw_d1IL8-NTiAqCOvNSS-NBgMxNLY2MzCydDYyKUAADscTBb
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
Edition 7
ExternalDocumentID US6493368B1
GroupedDBID EVB
ID FETCH-epo_espacenet_US6493368B13
IEDL.DBID EVB
IngestDate Fri Jul 19 13:59:07 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_US6493368B13
Notes Application Number: US20000605342
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20021210&DB=EPODOC&CC=US&NR=6493368B1
ParticipantIDs epo_espacenet_US6493368B1
PublicationCentury 2000
PublicationDate 20021210
PublicationDateYYYYMMDD 2002-12-10
PublicationDate_xml – month: 12
  year: 2002
  text: 20021210
  day: 10
PublicationDecade 2000
PublicationYear 2002
RelatedCompanies AGERE SYSTEMS INC
RelatedCompanies_xml – name: AGERE SYSTEMS INC
Score 2.5611732
Snippet A lateral injection VCSEL comprises upper and lower mirrors forming a cavity resonator, an active region disposed in the resonator, high conductivity upper and...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
Title Lateral injection vertical cavity surface-emitting laser
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20021210&DB=EPODOC&locale=&CC=US&NR=6493368B1
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LS8NAEB5KFfWmVbG-2IPkFsxjm8chCHlRxD6wjfRWku0GUiQtSYp_39mlqV70tuzCMDswO4-dmQ_gyXA0bup0peqZm6rUzKmapuZAdS1bd_OMayuZcBuNrWFCXxeDRQeKthdGzgn9ksMRUaMY6nsj3-vtTxIrlLWV9XNW4NbmJZ57odJGx4aYh6WEvhdNJ-EkUILAS2bK-N2zKEbuluNjoHSEXrQtlCH68EVTyva3RYnP4XiKxMrmAjq87MFp0AKv9eBktP_vxuVe9epLcN5S0Sz8SYpyLcunSiKhlFHGhKUCAYLUuyrHy6hISVYzE_SMeXUFJI7mwVBFFpaH6y6T2YFZ8xq65abkN0ByRk1DoGSgKClj3GGuxRzdFr3aqcFoH_p_krn95-wOzlqAE127h25T7fgD2tkme5QS-gZP7oK-
link.rule.ids 230,309,783,888,25576,76882
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_GFOebTsX5mQfpW3Ftsy59KMLalar7wm2yt9JmKVSkG12H_76XsE5f9C0kcFwOLveRu_sBPJisLSyDLnUjcWKdWinV49jq6I7dNZw0Ee2lSrgNR3Y4py-LzqIGWdULo-aEfqnhiKhRHPW9VO_1-ieJ5avays1jkuHW6imYub5WRcemnIel-T23Pxn7Y0_zPHc-1UZvrk0xcrdZDwOlA_SwmQQ76L_3ZFPK-rdFCU7gcILE8vIUaiJvQsOrgNeacDTc_Xfjcqd6mzNgg1g2C3-SLP9Q5VM5UVDKKGPCY4kAQTbbIsXL6EhJVTMT9IxFcQ4k6M-8UEcWov11o_l0z6x1AfV8lYtLICmnlilRMlCUlHPBuGNzZnRlr3ZsctqC1p9krv45u4dGOBsOosHz6PUajiuwE6N9A_Wy2IpbtLllcqek9Q2ZsoWu
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Lateral+injection+vertical+cavity+surface-emitting+laser&rft.inventor=CHIROVSKY+LEO+MARIA&rft.inventor=D%27ASARO+LUCIAN+ARTHUR&rft.inventor=HOBSON+WILLIAM+SCOTT&rft.inventor=LOPATA+JOHN&rft.date=2002-12-10&rft.externalDBID=B1&rft.externalDocID=US6493368B1