Resist composition and pattern forming process

A resist composition comprising, in a resist, an additive which has a melting point-of 160° C. or above, contains no aromatic ring, has a molecular size of no greater than 50 Å and is soluble in the developing solution for the resist, at 1-50 parts by weight with respect to 100 parts by solid weight...

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Bibliographic Details
Main Authors YANO EI, NOZAKI KOJI, KON JUNICHI, WATANABE KEIJI, HOSHINO EIICHI, URAGUCHI MASAHIRO, MINAGAWA TOSHIKATSU, YAMAMOTO YUICHI, KOZAWA MIWA, NAMIKI TAKAHISA
Format Patent
LanguageEnglish
Published 15.10.2002
Edition7
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:A resist composition comprising, in a resist, an additive which has a melting point-of 160° C. or above, contains no aromatic ring, has a molecular size of no greater than 50 Å and is soluble in the developing solution for the resist, at 1-50 parts by weight with respect to 100 parts by solid weight of the resist, as well as a pattern forming process employing it. It thereby becomes possible to obtain high-resolution resist patterns.
Bibliography:Application Number: US19990288781