Magnetic random access memory

A magnetic random access memory or the like has a plurality of magnetic storage elements laminated on a single transistor, resulting in a reduction in the number of necessary components and a considerable enhancement in the degree of integration of the memory. A magnetic random access memory or the...

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Bibliographic Details
Main Author NAGAI YUKIHIRO
Format Patent
LanguageEnglish
Published 03.09.2002
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:A magnetic random access memory or the like has a plurality of magnetic storage elements laminated on a single transistor, resulting in a reduction in the number of necessary components and a considerable enhancement in the degree of integration of the memory. A magnetic random access memory or the like, comprises a plurality of magnetic storage elements for magnetically storing information, a plurality of bit lines, each of which connected to each of the plurality of magnetic storage elements, a plurality of writing word lines, each of which is provided in correspondence to the vicinity of each of the plurality of magnetic storage elements and utilized for applying magnetic field to write the information, a single reading word line, and a switch including a first terminal and a second terminal, the first terminal being connected to the single reading word line to be utilized for determining whether current is caused to flow to the second terminal, the second terminal being connected to each of the plurality of magnetic storage elements.
Bibliography:Application Number: US20010753674