Method of fabricating semiconductor laser diode

A mask layer is formed on a semiconductor substrate such that an elongate opening of the mask layer extends lengthwise at an angle relative to a [011] direction of the semiconductor substrate. A ridge waveguide structure including an active layer is formed within the elongate opening on the semicond...

Full description

Saved in:
Bibliographic Details
Main Authors TAKEMASA KEIZO, WADA HIROSHI, KATOH YUKIO
Format Patent
LanguageEnglish
Published 14.05.2002
Edition7
Subjects
Online AccessGet full text

Cover

Loading…