Method of fabricating semiconductor laser diode
A mask layer is formed on a semiconductor substrate such that an elongate opening of the mask layer extends lengthwise at an angle relative to a [011] direction of the semiconductor substrate. A ridge waveguide structure including an active layer is formed within the elongate opening on the semicond...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
14.05.2002
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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