Graded composition diffusion barriers for chip wiring applications
A barrier film for a semiconductor device structure. The barrier film includes a compound including nitrogen and at least one of titanium or tantalum, nitrogen in a concentration that varies within the barrier film, and oxygen in a concentration that varies within the barrier film.
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
08.01.2002
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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