Lading plug contact pattern for DRAM application
A method of fabricating a semiconductor device having a landing plug is provided. First, a substrate is provided, which has active areas, wordlines stretching over the active areas and an isolation layer filling the gaps between the wordlines. Second, a pattern is defined and the isolation layer mas...
Saved in:
| Main Authors | , |
|---|---|
| Format | Patent |
| Language | English |
| Published |
13.02.2001
|
| Edition | 7 |
| Subjects | |
| Online Access | Get full text |
Cover
Loading…
| Abstract | A method of fabricating a semiconductor device having a landing plug is provided. First, a substrate is provided, which has active areas, wordlines stretching over the active areas and an isolation layer filling the gaps between the wordlines. Second, a pattern is defined and the isolation layer masked with the pattern is etched for the formation of bitline and node contacts, wherein the pattern has a protrusion which shortens the length of the bitline to wordline overlap formed thereby. Finally, the contacts are filled with a conducting layer. |
|---|---|
| AbstractList | A method of fabricating a semiconductor device having a landing plug is provided. First, a substrate is provided, which has active areas, wordlines stretching over the active areas and an isolation layer filling the gaps between the wordlines. Second, a pattern is defined and the isolation layer masked with the pattern is etched for the formation of bitline and node contacts, wherein the pattern has a protrusion which shortens the length of the bitline to wordline overlap formed thereby. Finally, the contacts are filled with a conducting layer. |
| Author | HUANG SEN-HUAN CHEN HSIUAN |
| Author_xml | – fullname: CHEN HSIUAN – fullname: HUANG SEN-HUAN |
| BookMark | eNrjYmDJy89L5WQw8ElMycxLVyjIKU1XSM7PK0lMLlEoSCwpSS3KU0jLL1JwCXL0VUgsKMjJTE4syczP42FgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8aHBZoYW5mZG5k6GxkQoAQDO-yxf |
| ContentType | Patent |
| DBID | EVB |
| DatabaseName | esp@cenet |
| DatabaseTitleList | |
| Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Medicine Chemistry Sciences |
| Edition | 7 |
| ExternalDocumentID | US6187627B1 |
| GroupedDBID | EVB |
| ID | FETCH-epo_espacenet_US6187627B13 |
| IEDL.DBID | EVB |
| IngestDate | Fri Aug 02 08:57:47 EDT 2024 |
| IsOpenAccess | true |
| IsPeerReviewed | false |
| IsScholarly | false |
| Language | English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-epo_espacenet_US6187627B13 |
| Notes | Application Number: US20000618612 |
| OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20010213&DB=EPODOC&CC=US&NR=6187627B1 |
| ParticipantIDs | epo_espacenet_US6187627B1 |
| PublicationCentury | 2000 |
| PublicationDate | 20010213 |
| PublicationDateYYYYMMDD | 2001-02-13 |
| PublicationDate_xml | – month: 02 year: 2001 text: 20010213 day: 13 |
| PublicationDecade | 2000 |
| PublicationYear | 2001 |
| RelatedCompanies | WINBOND ELECTRONICS CORPORATION |
| RelatedCompanies_xml | – name: WINBOND ELECTRONICS CORPORATION |
| Score | 2.532588 |
| Snippet | A method of fabricating a semiconductor device having a landing plug is provided. First, a substrate is provided, which has active areas, wordlines stretching... |
| SourceID | epo |
| SourceType | Open Access Repository |
| SubjectTerms | ELECTRICITY |
| Title | Lading plug contact pattern for DRAM application |
| URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20010213&DB=EPODOC&locale=&CC=US&NR=6187627B1 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LS8NAEB5KFfWmVbG-2IPktmjezSEU86KIaUvbSG9ls0mkIDHYFP9-Z9em9qK3ZRdmX8zOzM43MwAPLBdJvBxOVW4zahQ5o2nhaJSrtm1leCuMi6-BeGgNEuNlbs5bsGxiYWSe0G-ZHBE5iiO_1_K9rn4_sQKJrVw9pkvs-uxHMzdQGutYFKrWlcBzw_EoGPmK77vJVBlOXEsVbG97aCgdoBbdE-i_8M0TQSnVvkSJTuFwjMTK-gxaedmBY78pvNaBo3jr78bmlvVW5_D0KtHupPpYvxMBMGe8JpXMjlkS1DxJMHmOyZ4_-gJIFM78AcWpF7ttLpLpbpH6JbTR-s-vgGSFlaLBy5mTmYbBrV7hqKzQTJ1xxg3T7kL3TzLX_4zdwMkPnEqjqn4L7fprnd-hfK3Te3kyG1gPgEE |
| link.rule.ids | 230,309,786,891,25585,76894 |
| linkProvider | European Patent Office |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LT8MwDLamgRg3GCDGMwfUWwVdX_RQIfqYCrTdtHVotylNWzQJlYp14u_jhHXsArcokZyXHNux_RnghuYcxMtissJMKmtFTuW0sPoyU0zTyPBWKONfA1FsBFPteabPWrBocmEETuiXAEdEjmLI77V4r6vfTyxPxFYub9MFdn08DBLbkxrrmBeqViXPsf3R0Bu6kuva04kUj21D4WxvOmgo7aCGbXGYff_V4Ukp1bZEGRzA7giJlfUhtPKyCx23KbzWhb1o7e_G5pr1lkdwF4pod1K9r94IDzCnrCaVQMcsCWqexBs_RmTLH30MZOAnbiDj1PPNNufTyWaR6gm00frPT4FkhZGiwcuolemaxoz7wlJo0ddVyijTdLMHvT_JnP0zdg2dIInCefgUv5zD_k9oVV9W1Ato15-r_BJlbZ1eiVP6BodCgzQ |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Lading+plug+contact+pattern+for+DRAM+application&rft.inventor=CHEN+HSIUAN&rft.inventor=HUANG+SEN-HUAN&rft.date=2001-02-13&rft.externalDBID=B1&rft.externalDocID=US6187627B1 |