Method of forming photomask and pattern and method of forming a semiconductor device
A photomask where interconnection patterns and a contact hole pattern are drawn is used. According to the method, an overlay error due to a manufacturing error among reticles can be restricted.
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| Main Author | |
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| Format | Patent |
| Language | English |
| Published |
24.10.2000
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| Edition | 7 |
| Subjects | |
| Online Access | Get full text |
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| Abstract | A photomask where interconnection patterns and a contact hole pattern are drawn is used. According to the method, an overlay error due to a manufacturing error among reticles can be restricted. |
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| AbstractList | A photomask where interconnection patterns and a contact hole pattern are drawn is used. According to the method, an overlay error due to a manufacturing error among reticles can be restricted. |
| Author | YAMAGUCHI; ATSUMI |
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| Notes | Application Number: US19990229331 |
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| PublicationDateYYYYMMDD | 2000-10-24 |
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| RelatedCompanies | MITSUBISHI DENKI KABUSHIKI KAISHA |
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| Snippet | A photomask where interconnection patterns and a contact hole pattern are drawn is used. According to the method, an overlay error due to a manufacturing error... |
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| SubjectTerms | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| Title | Method of forming photomask and pattern and method of forming a semiconductor device |
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