Method of forming photomask and pattern and method of forming a semiconductor device

A photomask where interconnection patterns and a contact hole pattern are drawn is used. According to the method, an overlay error due to a manufacturing error among reticles can be restricted.

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Bibliographic Details
Main Author YAMAGUCHI; ATSUMI
Format Patent
LanguageEnglish
Published 24.10.2000
Edition7
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:A photomask where interconnection patterns and a contact hole pattern are drawn is used. According to the method, an overlay error due to a manufacturing error among reticles can be restricted.
Bibliography:Application Number: US19990229331