Method of forming a contact hole in a semiconductor device
The present invention includes forming a first conductive layer on a semiconductor substrate, and forming a first dielectric layer on the first conductive layer. After patterning to etch the first dielectric layer and the first conductive layer, a second dielectric layer is formed on the semiconduct...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
15.08.2000
|
Edition | 7 |
Subjects | |
Online Access | Get full text |
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