Method of forming a contact hole in a semiconductor device

• Main Authors: JENG; ERIK S, CHEN; BI-LING, LIU; HAOIEH
• Format: Patent
• Language: English
• Published: 15.08.2000
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention includes forming a first conductive layer on a semiconductor substrate, and forming a first dielectric layer on the first conductive layer. After patterning to etch the first dielectric layer and the first conductive layer, a second dielectric layer is formed on the semiconduct...