Semiconductor optical modulator

A semiconductor optical modulator includes a light absorbing layer having a multi-quantum well structure including two quantum wells including quantum well layers bounded and separated by barrier layers, the quantum wells having respective, different DELTA Ev/ DELTA Ec ratios where DELTA Ec is the d...

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Bibliographic Details
Main Author ISHIMURA; EITARO
Format Patent
LanguageEnglish
Published 28.05.1996
Edition6
Subjects
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Summary:A semiconductor optical modulator includes a light absorbing layer having a multi-quantum well structure including two quantum wells including quantum well layers bounded and separated by barrier layers, the quantum wells having respective, different DELTA Ev/ DELTA Ec ratios where DELTA Ec is the discontinuity between the barrier layer and a quantum well layer in the conduction band edge and DELTA Ev is the discontinuity between the barrier layer and a quantum well layer in the valence band edge. By this construction, the absorption peak when no electric field is applied significantly shifts toward the longer wavelength side, resulting in a large difference between the absorption peak wavelength when no electric field is applied and the absorption peak wavelength when an electric field is applied, whereby the absorption loss of a semiconductor optical modulator when no electric field is applied is reduced.
Bibliography:Application Number: US19940212704