Hydrogen plasma passivation of GaAs

• Main Authors: GOTTSCHO; RICHARD A, PREPPERNAU; BRYAN L
• Format: Patent
• Language: English
• Published: 12.01.1993
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Hydrogen Plasma surface passivation of III-V Semiconductors is critically dependent on exposure time and pressure because of competition between plasma passivation and damage. Proper control of pressure according to the invention yields reproducible and stable passivation. Improved passivation is ob...