Hydrogen plasma passivation of GaAs
Hydrogen Plasma surface passivation of III-V Semiconductors is critically dependent on exposure time and pressure because of competition between plasma passivation and damage. Proper control of pressure according to the invention yields reproducible and stable passivation. Improved passivation is ob...
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| Main Authors | , |
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| Format | Patent |
| Language | English |
| Published |
12.01.1993
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| Subjects | |
| Online Access | Get full text |
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| Abstract | Hydrogen Plasma surface passivation of III-V Semiconductors is critically dependent on exposure time and pressure because of competition between plasma passivation and damage. Proper control of pressure according to the invention yields reproducible and stable passivation. Improved passivation is obtained using high pressure hydrogen plasmas, i.e. above 1 Torr. |
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| AbstractList | Hydrogen Plasma surface passivation of III-V Semiconductors is critically dependent on exposure time and pressure because of competition between plasma passivation and damage. Proper control of pressure according to the invention yields reproducible and stable passivation. Improved passivation is obtained using high pressure hydrogen plasmas, i.e. above 1 Torr. |
| Author | GOTTSCHO; RICHARD A PREPPERNAU; BRYAN L |
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| Notes | Application Number: US19910643688 |
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| PublicationDate | 19930112 |
| PublicationDateYYYYMMDD | 1993-01-12 |
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| PublicationDecade | 1990 |
| PublicationYear | 1993 |
| RelatedCompanies | AT&T BELL LABORATORIES |
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| Snippet | Hydrogen Plasma surface passivation of III-V Semiconductors is critically dependent on exposure time and pressure because of competition between plasma... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | Hydrogen plasma passivation of GaAs |
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