Method of passivating pn-junction in a semiconductor device

• Main Author: BYATT; STEPHEN W
• Format: Patent
• Language: English
• Published: 01.03.1983
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The surface termination of a p-n junction of a semiconductor device is passivated with semi-insulating material which is deposited on a thin layer of insulating material formed at the bared semiconductor surface by a chemical conversion treatment at a temperature above room temperature. The layer ma...