Process for forming monolithic semiconductor display
A process for producing light emitting diodes is disclosed. In the process a major planar surface of a single crystal silicon wafer is modified to acceptably match the crystallographic lattice constant of a preselected electroluminescent single crystal semiconductor, such as gallium phosphide. The p...
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Main Author | |
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Format | Patent |
Language | English |
Published |
27.01.1976
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Subjects | |
Online Access | Get full text |
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