Automatic P-N junction formation during growth of a heterojunction

• Main Authors: HOVEL; HAROLD J, CUOMO; JEROME J
• Format: Patent
• Language: English
• Published: 04.03.1975
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS

A process for the preparation of a homojunction in a semiconductor substrate, e.g., a p-n junction, during growth of a heterojunction between the substrate and a second semiconductor consisting of either gallium nitride or aluminum nitride where aluminum atoms from the aluminum nitride or gallium atoms from the gallium nitride diffuse into the substrate in a region of the substrate adjacent the aluminum nitride or gallium nitride to form the homojunction.