Non-Volatile Resistive Random-Access Memory and a Manufacturing Method Thereof

A non-volatile resistive random-access memory (ReRAM), which includes a first electrode, a second electrode, and a resistive switching/active layer which is located between the first and second electrode. The switching layer contains milk or is milk-based, or contains an emulsion containing lactose,...

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Bibliographic Details
Main Authors Vallabhapurapu, Vijaya Srinivasu, Dlamini, Zolile Wiseman, Vallabhapurapu, Sreedevi
Format Patent
LanguageEnglish
Published 07.11.2024
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A non-volatile resistive random-access memory (ReRAM), which includes a first electrode, a second electrode, and a resistive switching/active layer which is located between the first and second electrode. The switching layer contains milk or is milk-based, or contains an emulsion containing lactose, fat, protein and water. The switching layer may more specifically contain cow milk.
Bibliography:Application Number: US202218685147