ANTIFUSE-TYPE ONE TIME PROGRAMMING MEMORY WITH FORKSHEET TRANSISTORS

• Main Authors: CHEN, Lun-Chun, HO, Ping-Lung
• Format: Patent
• Language: English
• Published: 26.09.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INFORMATION STORAGE; PHYSICS; SEMICONDUCTOR DEVICES; STATIC STORES

An antifuse-type one time programming memory includes a first memory cell. The first memory cell includes at least one antifuse transistor. The antifuse transistor is forksheet transistor. The antifuse transistor includes a first nanowire, a first gate structure, a first drain/source structure and a second drain/source structure. A first-portion surface of the first nanowire is contacted with the isolation wall. A second-portion surface of the first nanowire is contacted with the first gate structure. The first gate structure includes a first spacer, a second spacer, a first gate dielectric layer and a first gate layer. The first drain/source structure is electrically contacted with a first terminal of the first nanowire. The second drain/source structure is electrically contacted with a second terminal of the first nanowire.