SILICON OXYNITRIDE REMOVAL ENHANCERS AND METHODS OF USE THEREOF

The present disclosure relates to chemical mechanical polishing (CMP) compositions for polishing silicon oxynitride (SiON) surfaces. In particular, the CMP composition includes an abrasive, an additive, and water, combined in specified amounts to provide a composition with advantageous properties su...

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Bibliographic Details
Main Author GRANSTROM, Jimmy
Format Patent
LanguageEnglish
Published 12.09.2024
Subjects
ADHESIVES
CHEMISTRY
DYES
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH
SKI WAXES
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Summary:The present disclosure relates to chemical mechanical polishing (CMP) compositions for polishing silicon oxynitride (SiON) surfaces. In particular, the CMP composition includes an abrasive, an additive, and water, combined in specified amounts to provide a composition with advantageous properties such as high SiON removal rates even upon dilution of the composition with a diluent.
Bibliography:Application Number: US202418589690