MICROELECTRONIC DEVICES WITH CONDUCTIVE EXTENSIONS BETWEEN UPPER STAIRCASE STEPS AND THEIR CONTACTS, AND RELATED METHODS

Methods for forming microelectronic devices include forming a staircase structure in a stack structure having a vertically alternating sequence of insulative and conductive materials arranged in tiers. Steps are at lateral ends of the tiers. Contact openings of different aspect ratios are formed in...

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Main Authors Ong, Biow Hiem, Chen, Chii Wean Calvin, Emor, Christian George, Lo, Wing Yu, Quek, Chieh Hsien, Daycock, David A
Format Patent
LanguageEnglish
Published 15.08.2024
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Abstract Methods for forming microelectronic devices include forming a staircase structure in a stack structure having a vertically alternating sequence of insulative and conductive materials arranged in tiers. Steps are at lateral ends of the tiers. Contact openings of different aspect ratios are formed in fill material adjacent the staircase structure, with some openings terminating in the fill material and others exposing portions of the conductive material of upper tiers of the stack structure. Additional conductive material is selectively formed on the exposed portions of the conductive material. The contact openings initially terminating in the fill material are extended to expose portions of the conductive material of lower elevations. Contacts are formed, with some extending to the additional conductive material and others extending to conductive material of the tiers of the lower elevations. Microelectronic devices and systems incorporating such staircase structures and contacts are also disclosed.
AbstractList Methods for forming microelectronic devices include forming a staircase structure in a stack structure having a vertically alternating sequence of insulative and conductive materials arranged in tiers. Steps are at lateral ends of the tiers. Contact openings of different aspect ratios are formed in fill material adjacent the staircase structure, with some openings terminating in the fill material and others exposing portions of the conductive material of upper tiers of the stack structure. Additional conductive material is selectively formed on the exposed portions of the conductive material. The contact openings initially terminating in the fill material are extended to expose portions of the conductive material of lower elevations. Contacts are formed, with some extending to the additional conductive material and others extending to conductive material of the tiers of the lower elevations. Microelectronic devices and systems incorporating such staircase structures and contacts are also disclosed.
Author Ong, Biow Hiem
Quek, Chieh Hsien
Emor, Christian George
Daycock, David A
Lo, Wing Yu
Chen, Chii Wean Calvin
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– fullname: Daycock, David A
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Snippet Methods for forming microelectronic devices include forming a staircase structure in a stack structure having a vertically alternating sequence of insulative...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title MICROELECTRONIC DEVICES WITH CONDUCTIVE EXTENSIONS BETWEEN UPPER STAIRCASE STEPS AND THEIR CONTACTS, AND RELATED METHODS
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