METHOD OF FABRICATING SILICON CARBIDE INGOT
A silicon carbide ingot is provided, which includes a seed end, and a dome end opposite to the seed end. In the silicon carbide ingot, a ratio of the vanadium concentration to the nitrogen concentration at the seed end is in a range of 5:1 to 11:1, and a ratio of the vanadium concentration to the ni...
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Main Author | |
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Format | Patent |
Language | English |
Published |
15.08.2024
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Subjects | |
Online Access | Get full text |
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