METHOD OF FABRICATING SILICON CARBIDE INGOT

A silicon carbide ingot is provided, which includes a seed end, and a dome end opposite to the seed end. In the silicon carbide ingot, a ratio of the vanadium concentration to the nitrogen concentration at the seed end is in a range of 5:1 to 11:1, and a ratio of the vanadium concentration to the ni...

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Bibliographic Details
Main Author Lin, Ching-Shan
Format Patent
LanguageEnglish
Published 15.08.2024
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
COMPOUNDS THEREOF
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:A silicon carbide ingot is provided, which includes a seed end, and a dome end opposite to the seed end. In the silicon carbide ingot, a ratio of the vanadium concentration to the nitrogen concentration at the seed end is in a range of 5:1 to 11:1, and a ratio of the vanadium concentration to the nitrogen concentration at the dome end is in a range of 2:1 to 11:1.
Bibliography:Application Number: US202418644108