Semiconductor Structure Having High Breakdown Voltage Etch-Stop Layer

• Main Authors: Lan, Chin Kun, Liou, Joung-Wei
• Format: Patent
• Language: English
• Published: 08.08.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present disclosure relates to a method of forming a semiconductor structure. The method includes depositing an etch-stop layer (ESL) over a first dielectric layer. The ESL layer deposition can include: flowing a first precursor over the first dielectric layer; purging at least a portion of the f...