RESIN COMPOSITION FOR ENCAPSULATION AND SEMICONDUCTOR DEVICE

Provided are a resin composition for encapsulation that is superior in high-temperature reverse bias test (HTRB test) reliability; and a semiconductor device. The resin composition for encapsulation is used to encapsulate a power semiconductor element made of Si, SiC, GaN, Ga2O3 or diamond, and a cu...

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Bibliographic Details
Main Authors YOKOTA, Ryuhei, OSADA, Shoichi, KAWAMURA, Norifumi, HORIGOME, Hiroki, HAGIWARA, Kenji
Format Patent
LanguageEnglish
Published 08.08.2024
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Summary:Provided are a resin composition for encapsulation that is superior in high-temperature reverse bias test (HTRB test) reliability; and a semiconductor device. The resin composition for encapsulation is used to encapsulate a power semiconductor element made of Si, SiC, GaN, Ga2O3 or diamond, and a cured product of the resin composition for encapsulation has a dielectric tangent of not larger than 0.50 when measured at 150° C. and 0.1 Hz. The semiconductor device is such that a power semiconductor element made of Si, SiC, GaN, Ga2O3 or diamond is encapsulated by the cured product of the resin composition for encapsulation.
Bibliography:Application Number: US202418631187