SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bott...

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Main Authors Lee, Yi-Hui, Wang, Hui-Lin, Shih, Yi-An, Hsieh, Chin-Yang, Weng, Chen-Yi, Wang, Tu-Ping, Tseng, Yi-Wei, Jhang, Jing-Yin, Liu, Ying-Cheng, Tseng, I-Ming
Format Patent
LanguageEnglish
Published 01.08.2024
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Abstract A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bottom surface of the protrusions contact the liner directly.
AbstractList A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bottom surface of the protrusions contact the liner directly.
Author Liu, Ying-Cheng
Tseng, Yi-Wei
Tseng, I-Ming
Wang, Tu-Ping
Weng, Chen-Yi
Jhang, Jing-Yin
Lee, Yi-Hui
Shih, Yi-An
Wang, Hui-Lin
Hsieh, Chin-Yang
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– fullname: Wang, Tu-Ping
– fullname: Tseng, Yi-Wei
– fullname: Jhang, Jing-Yin
– fullname: Liu, Ying-Cheng
– fullname: Tseng, I-Ming
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Snippet A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first...
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SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
Title SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
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