THREE-DIMENSIONAL MEMORY DEVICE CONTAINING INVERTED STAIRCASE AND METHOD OF MAKING THE SAME

• Main Authors: OTSU, Yoshitaka, MAEKURA, Takayuki
• Format: Patent
• Language: English
• Published: 01.08.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A device structure includes an alternating stack of insulating layers and composite layers located over a source layer, where each of the composite layers includes a combination of a respective dielectric material layer and a respective electrically conductive layer, memory openings vertically extending through the alternating stack, memory opening fill structures located in the memory openings, where each of the memory opening fill structures includes a respective vertical stack of memory elements and a respective vertical semiconductor channel, and contact via structures vertically extending through a respective subset of the dielectric material layers and the insulating layers in the alternating stack and contacting a horizontal surface of a respective one of the electrically conductive layers in the alternating stack.