SEMICONDUCTOR LIGHT-EMITTING DEVICE

A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer and a second semiconductor layer; a first reflective layer formed on the first semiconductor layer and including a plurality of vias; a plurality of contact structures respectively filled in th...

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Main Authors CHIANG, Tsung-Hsun, HU, Bo-Jiun, CHUANG, Wen-Hung, TSENG, Tzu-Yao, CHEN, Chao-Hsing, WANG, Jia-Kuen, LIN, Yu-Ling
Format Patent
LanguageEnglish
Published 11.07.2024
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Summary:A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer and a second semiconductor layer; a first reflective layer formed on the first semiconductor layer and including a plurality of vias; a plurality of contact structures respectively filled in the vias and electrically connected to the first semiconductor layer; a second reflective layer including metal material formed on the first reflective layer and contacting the contact structures; a plurality of conductive vias surrounded by the semiconductor stack; a connecting layer formed in the conductive vias and electrically connected to the second semiconductor layer; a first pad portion electrically connected to the second semiconductor layer; and a second pad portion electrically connected to the first semiconductor layer, wherein a shortest distance between two of the conductive vias is larger than a shortest distance between the first pad portion and the second pad portion.
Bibliography:Application Number: US202318401106