THIN FILM TRANSISTOR
A thin film transistor includes a substrate, a semiconductor layer, a gate insulating layer, a gate, a source and a drain. The semiconductor layer is located above the substrate. The gate insulating layer is located above the semiconductor layer. The gate is located above the gate insulating layer a...
Saved in:
Main Authors | , , , , , |
---|---|
Format | Patent |
Language | English |
Published |
11.07.2024
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | A thin film transistor includes a substrate, a semiconductor layer, a gate insulating layer, a gate, a source and a drain. The semiconductor layer is located above the substrate. The gate insulating layer is located above the semiconductor layer. The gate is located above the gate insulating layer and overlapping with the semiconductor layer. The gate includes a first portion, a second portion and a third portion. The first portion is extending along the surface of the gate insulating layer and directly in contact with the gate insulating layer. The second portion is separated from the gate insulating layer. Taking the surface of the gate insulating layer as a reference, the top surface of the second portion is higher than the top surface of the first portion. The third portion connects the first portion to the second portion. The source and the drain are electrically connected to the semiconductor layer. |
---|---|
AbstractList | A thin film transistor includes a substrate, a semiconductor layer, a gate insulating layer, a gate, a source and a drain. The semiconductor layer is located above the substrate. The gate insulating layer is located above the semiconductor layer. The gate is located above the gate insulating layer and overlapping with the semiconductor layer. The gate includes a first portion, a second portion and a third portion. The first portion is extending along the surface of the gate insulating layer and directly in contact with the gate insulating layer. The second portion is separated from the gate insulating layer. Taking the surface of the gate insulating layer as a reference, the top surface of the second portion is higher than the top surface of the first portion. The third portion connects the first portion to the second portion. The source and the drain are electrically connected to the semiconductor layer. |
Author | Chang, Kuo-Jui Weng, Chien-Sen Liao, Yu-Chuan Chiang, Chi-Sheng Chen, Wen-Tai Sun, Ming-Wei |
Author_xml | – fullname: Chen, Wen-Tai – fullname: Weng, Chien-Sen – fullname: Sun, Ming-Wei – fullname: Chang, Kuo-Jui – fullname: Liao, Yu-Chuan – fullname: Chiang, Chi-Sheng |
BookMark | eNrjYmDJy89L5WQQCfHw9FNw8_TxVQgJcvQL9gwO8Q_iYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBkYmRsYmpsamjpbGxKkCAMoRIW0 |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
ExternalDocumentID | US2024234535A9 |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_US2024234535A93 |
IEDL.DBID | EVB |
IngestDate | Fri Aug 16 05:56:06 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_US2024234535A93 |
Notes | Application Number: US202218073484 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240711&DB=EPODOC&CC=US&NR=2024234535A9 |
ParticipantIDs | epo_espacenet_US2024234535A9 |
PublicationCentury | 2000 |
PublicationDate | 20240711 |
PublicationDateYYYYMMDD | 2024-07-11 |
PublicationDate_xml | – month: 07 year: 2024 text: 20240711 day: 11 |
PublicationDecade | 2020 |
PublicationYear | 2024 |
RelatedCompanies | AUO Corporation |
RelatedCompanies_xml | – name: AUO Corporation |
Score | 3.5582962 |
Snippet | A thin film transistor includes a substrate, a semiconductor layer, a gate insulating layer, a gate, a source and a drain. The semiconductor layer is located... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | THIN FILM TRANSISTOR |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240711&DB=EPODOC&locale=&CC=US&NR=2024234535A9 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQATZSk81MDNJ0jUySTXVNEi2TdBMNkwx1k1NSDYyTDRKNDFNAG4V9_cw8Qk28IkwjmBhyYHthwOeEloMPRwTmqGRgfi8Bl9cFiEEsF_DaymL9pEygUL69W4itixq0dwzunhiquTjZugb4u_g7qzk724YGq_kFgeWMjE1MjU0dLZkZWEENadBJ-65hTqB9KQXIlYqbIANbANC8vBIhBqbUPGEGTmfY3WvCDBy-0ClvIBOa-4pFGERCPDz9FNw8fXwVQoIc_YI9g0P8g0QZlN1cQ5w9dIHGx8N9Ex8ajOwWYzEGFmA_P1WCQcEoKcko1RSoKtEkxSQRGGrAplKSuZFJimmSYRKwFybJIIPPJCn80tIMXCAuaFjS0FCGgaWkqDRVFlifliTJgYMBANIqdig |
link.rule.ids | 230,309,786,891,25594,76904 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_mFOebbsrUqQWlb8WmTTf2UGTrB632Y_RD9laatoIgc7iK_77X0Ome9hZy4UgOLne_y90F4AGd1GJM5TdJoYUm0XzKpJwwIhVlJauFnCukbAqF_WDspPR5qS078LGtheF9Qn94c0TUqAL1veb39fo_iGXy3MrNI3vHqc8nO9FNsUXHHJ4Q0Zzr1iI0Q0M0DD2NxSDiNEWlmqrNpgdwOEFQ2HTat17nTV3Keteo2KdwtEB-q_oMOtWqDz1j-_daH4799skbh632bQYwSBw3EGzX84UkmgWxGydhdA73tpUYjoTss7_TZGm8uxf1ArqI86shCApjSqXhqpyWNEepoavEJgotNUYYorBLGO3jdLWffAc9J_G9zHODl2s4aUhNiJKQEXTrr-_qBm1rzW65SH4Bfk55Ew |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=THIN+FILM+TRANSISTOR&rft.inventor=Chen%2C+Wen-Tai&rft.inventor=Weng%2C+Chien-Sen&rft.inventor=Sun%2C+Ming-Wei&rft.inventor=Chang%2C+Kuo-Jui&rft.inventor=Liao%2C+Yu-Chuan&rft.inventor=Chiang%2C+Chi-Sheng&rft.date=2024-07-11&rft.externalDBID=A9&rft.externalDocID=US2024234535A9 |