MICROELECTRONIC DEVICES INCLUDING CAPACITORS, AND RELATED ELECTRONIC SYSTEMS AND METHODS
A microelectronic device comprises an access device comprising a source region and a drain region spaced from the source region, an insulative material vertically adjacent to the access device, and a capacitor within the insulative material and in electrical communication with the access device. The...
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Main Authors | , , , , , , , |
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Format | Patent |
Language | English |
Published |
11.07.2024
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Subjects | |
Online Access | Get full text |
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Summary: | A microelectronic device comprises an access device comprising a source region and a drain region spaced from the source region, an insulative material vertically adjacent to the access device, and a capacitor within the insulative material and in electrical communication with the access device. The capacitor comprises a material comprising silicon oxynitride or titanium silicon nitride over surfaces of the insulative material, a first electrode comprising titanium nitride on the material, a dielectric material over the first electrode, and a second electrode on the dielectric material. Related methods of forming the microelectronic device and an electronic system including the microelectronic devices are also described. |
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Bibliography: | Application Number: US202218047978 |