SEMICONDUCTOR STRUCTURE FORMING A PLURALITY OF TRANSISTORS

A semiconductor structure forming a plurality of transistors is disclosed. The semiconductor structure comprising: a source layer; a plurality of vertical nanowires erecting from the source layer; a first spacer layer arranged on the source layer and around each of the plurality of vertical nanowire...

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Bibliographic Details
Main Authors Andric, Stefan, Olson, Simon, Wernersson, Lars-Erik, Tilly, Lars, Tired, Tobias, Jönsson, Adam
Format Patent
LanguageEnglish
Published 04.07.2024
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