SEMICONDUCTOR STRUCTURE FORMING A PLURALITY OF TRANSISTORS
A semiconductor structure forming a plurality of transistors is disclosed. The semiconductor structure comprising: a source layer; a plurality of vertical nanowires erecting from the source layer; a first spacer layer arranged on the source layer and around each of the plurality of vertical nanowire...
Saved in:
Main Authors | , , , , , |
---|---|
Format | Patent |
Language | English |
Published |
04.07.2024
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Be the first to leave a comment!