SEMICONDUCTOR DEVICE

A semiconductor device having cells is provided, with each cell including a gate. The device includes a gate pad, a gate busbar and gate lines. The busbar connects the gate pad to the gate lines, the gate lines connect the gate busbar to the gates of the cells, and each of the gate lines is disposed...

Full description

Saved in:
Bibliographic Details
Main Authors Jiang, Ke, Gajda, Mark, Zhu, Chunlin, Zhang, Xukun, Zuo, Huiling, Shi, Jinshan, Xiang, Junli, Fang, Yuan
Format Patent
LanguageEnglish
Published 13.06.2024
Subjects
Online AccessGet full text

Cover

Loading…
Abstract A semiconductor device having cells is provided, with each cell including a gate. The device includes a gate pad, a gate busbar and gate lines. The busbar connects the gate pad to the gate lines, the gate lines connect the gate busbar to the gates of the cells, and each of the gate lines is disposed along a first axis. The gate busbar includes first portions each disposed along a second axis, and the second axis intersects with the first axis. The first portions are spaced apart from each other to divide the semiconductor device into emitter segments. Lengths of the emitter segments along the first axis changes with distances of the segments from the gate pad, so that gate signals arriving at the gates of the cells from the gate pad via the gate busbar and the gate lines are substantially consistent.
AbstractList A semiconductor device having cells is provided, with each cell including a gate. The device includes a gate pad, a gate busbar and gate lines. The busbar connects the gate pad to the gate lines, the gate lines connect the gate busbar to the gates of the cells, and each of the gate lines is disposed along a first axis. The gate busbar includes first portions each disposed along a second axis, and the second axis intersects with the first axis. The first portions are spaced apart from each other to divide the semiconductor device into emitter segments. Lengths of the emitter segments along the first axis changes with distances of the segments from the gate pad, so that gate signals arriving at the gates of the cells from the gate pad via the gate busbar and the gate lines are substantially consistent.
Author Zuo, Huiling
Gajda, Mark
Fang, Yuan
Zhang, Xukun
Xiang, Junli
Zhu, Chunlin
Jiang, Ke
Shi, Jinshan
Author_xml – fullname: Jiang, Ke
– fullname: Gajda, Mark
– fullname: Zhu, Chunlin
– fullname: Zhang, Xukun
– fullname: Zuo, Huiling
– fullname: Shi, Jinshan
– fullname: Xiang, Junli
– fullname: Fang, Yuan
BookMark eNrjYmDJy89L5WQQCXb19XT293MJdQ7xD1JwcQ3zdHblYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBkYmhpYmppaWjobGxKkCAMx4IXY
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
ExternalDocumentID US2024194599A1
GroupedDBID EVB
ID FETCH-epo_espacenet_US2024194599A13
IEDL.DBID EVB
IngestDate Fri Oct 11 05:30:43 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_US2024194599A13
Notes Application Number: US202318533437
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240613&DB=EPODOC&CC=US&NR=2024194599A1
ParticipantIDs epo_espacenet_US2024194599A1
PublicationCentury 2000
PublicationDate 20240613
PublicationDateYYYYMMDD 2024-06-13
PublicationDate_xml – month: 06
  year: 2024
  text: 20240613
  day: 13
PublicationDecade 2020
PublicationYear 2024
RelatedCompanies Nexperia Technology (Shanghai) Ltd
NEXPERIA B.V
RelatedCompanies_xml – name: Nexperia Technology (Shanghai) Ltd
– name: NEXPERIA B.V
Score 3.5533
Snippet A semiconductor device having cells is provided, with each cell including a gate. The device includes a gate pad, a gate busbar and gate lines. The busbar...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title SEMICONDUCTOR DEVICE
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240613&DB=EPODOC&locale=&CC=US&NR=2024194599A1
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQAdaiJolGpsa6qSlmwA5KcqqxbqJxormukXFiSlpyKrBOSAFtTvb1M_MINfGKMI1gYsiB7YUBnxNaDj4cEZijkoH5vQRcXhcgBrFcwGsri_WTMoFC-fZuIbYuatDeMaR6UnNxsnUN8Hfxd1ZzdrYNDVbzCwLLAfvrppaWjsC-EiuoIQ06ad81zAm0L6UAuVJxE2RgCwCal1cixMCUmifMwOkMu3tNmIHDFzrlDWRCc1-xCINIMCjQ_P1cQp1D_IMUXFzDPJ1dRRmU3VxDnD10gcbHw30THxqM7BZjMQYWYD8_VYJBIQ20d88yzSDVJCnVxNI8zQLY1jJMTTawSDJJTDFKNZBkkMFnkhR-aWkGLhAXtMrJ0FiGgaWkqDRVFlifliTJgYMBALTudds
link.rule.ids 230,309,786,891,25594,76904
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQAdaiJolGpsa6qSlmwA5KcqqxbqJxormukXFiSlpyKrBOSAFtTvb1M_MINfGKMI1gYsiB7YUBnxNaDj4cEZijkoH5vQRcXhcgBrFcwGsri_WTMoFC-fZuIbYuatDeMaR6UnNxsnUN8Hfxd1ZzdrYNDVbzCwLLAfvrppaWjsC-Eqs5sFMIOmnfNcwJtC-lALlScRNkYAsAmpdXIsTAlJonzMDpDLt7TZiBwxc65Q1kQnNfsQiDSDAo0Pz9XEKdQ_yDFFxcwzydXUUZlN1cQ5w9dIHGx8N9Ex8ajOwWYzEGFmA_P1WCQSENtHfPMs0g1SQp1cTSPM0C2NYyTE02sEgySUwxSjWQZJDBZ5IUfml5Bk6PEF-feB9PP29pBi6QFGjFk6GxDANLSVFpqiywbi1JkgMHCQBdanjG
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=SEMICONDUCTOR+DEVICE&rft.inventor=Jiang%2C+Ke&rft.inventor=Gajda%2C+Mark&rft.inventor=Zhu%2C+Chunlin&rft.inventor=Zhang%2C+Xukun&rft.inventor=Zuo%2C+Huiling&rft.inventor=Shi%2C+Jinshan&rft.inventor=Xiang%2C+Junli&rft.inventor=Fang%2C+Yuan&rft.date=2024-06-13&rft.externalDBID=A1&rft.externalDocID=US2024194599A1