METHOD AND STRUCTURE FOR FINFET DEVICE

• Main Authors: Ching, Kuo-Cheng, Leung, Ying-Keung
• Format: Patent
• Language: English
• Published: 30.05.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present disclosure provides a method, which includes forming a first fin structure and a second fin structure over a substrate, which has a first trench positioned between the first and second fin structures. The method also includes forming a first dielectric layer within the first trench, rece...