SEMICONDUCTOR MEMORY DEVICE

• Main Authors: FUNATSUKI, Rieko, MAEDA, Takashi, SHIGA, Hidehiro, SAKAGUCHI, Natsuki
• Format: Patent
• Language: English
• Published: 21.03.2024
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

A control circuit of a semiconductor memory device performs a write operation on a memory cell transistor of the semiconductor memory device by performing a first pulse application operation of lowering a threshold voltage of the memory cell transistor, a precharge operation, and then a second pulse application operation. In the precharge operation, in a state in which first and second select transistors connected to the memory cell transistor are turned on, a bit line connected to the memory cell transistor is charged by applying a ground voltage to a word line connected to a gate of the memory cell transistor and applying a voltage higher than the ground voltage to a source line. In the second pulse application operation, in a state in which the first select transistor is turned on and the second select transistor is turned off, a program voltage is applied to the word line.