Z-PROFILING OF WAFERS BASED ON X-RAY MEASUREMENTS

• Main Authors: Hadar, Uri, Eilon, Michal, Girmonsky, Doron, Shemesh, Dror
• Format: Patent
• Language: English
• Published: 14.03.2024
• Subjects: CALCULATING; COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS; COMPUTING; COUNTING; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MEASURING; PHYSICS; TESTING

A computer-based method for non-destructive z-profiling of samples. The method includes: a measurement operation and a data analysis operation. The measurement operation includes, for each of a plurality of landing energies: (i) projecting an electron beam on a sample at a respective landing energy, such that light-emitting interactions between electrons from the electron beam and the sample occur within a respective probed region of the sample, which is centered about a respective depth; and (ii) measuring the emitted light to obtain an optical emission data set of the sample. The data analysis operation includes obtaining from the measured optical emission data sets a concentration map quantifying a dependence of a concentration of a material, which the sample comprises, on at least the depth.