INTERLOCK SYSTEM FOR PROCESSING CHAMBER EXHAUST ASSEMBLY

• Main Authors: Hanchanoor Rathnakara Gowda, Bharath Kumar, Alam, Syed A, Standish, Peter, Haller, Uwe P, Casanova, Robert, Downey, Ryan Thomas, Krivulina, Liliya I, Leng, Collen, Benjamin Raj, Daemian Raj
• Format: Patent
• Language: English
• Published: 08.02.2024
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Exemplary semiconductor processing systems may include a gas source coupled with a number of processing chambers. The gas source may include a controller. Each chamber may include an exhaust assembly having a foreline and a pump. The systems may include at least one abatement system coupled with each pump. The systems may include a plurality of exhaust lines that extend between each pump and the abatement system. The systems may include a dilution gas source coupled with each exhaust line. The systems may include a mass flow controller coupled between the dilution gas source and each exhaust line. The systems may include a temperature sensor coupled with each exhaust line between the pump and the abatement system. The temperature sensor may be communicatively coupled with the controller of the gas source, which may control flow of a gas to a chamber based on a measurement from the temperature sensor.