TWO-JUNCTION PHOTOVOLTAIC DEVICES

The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, whe...

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Bibliographic Details
Main Authors FRANCE, Ryan Matthew, HENRY, Asegun, FRIEDMAN, Daniel Joseph, STEINER, Myles Aaron
Format Patent
LanguageEnglish
Published 01.02.2024
Subjects
BASIC ELECTRIC ELEMENTS
CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GENERATION
GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRA-REDRADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, E.G. USINGPHOTOVOLTAIC [PV] MODULES
SEMICONDUCTOR DEVICES
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Summary:The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.
Bibliography:Application Number: US202318454171